Shield indent trench termination for shielded gate MOSFETs

A power semiconductor device comprising:

• a semiconductor region having an active region and a termination region;
• a first trench shield electrode defined in the semiconductor region, the first trench shield electrode extending along a longitudinal axis, the first trench shield electrode having a first portion disposed in the active region and a second portion disposed in the termination region, the second portion of the first trench shield electrode extending, along the longitudinal axis, a first distance into the termination region from the active region;
• a second trench shield electrode defined in the semiconductor region, the second trench shield electrode extending along the longitudinal axis in parallel with the first trench shield electrode, the second trench shield electrode having a first portion disposed in the active region and a second portion disposed in the termination region, the second portion of the second trench shield electrode extending, along the longitudinal axis, the first distance into the termination region from the active region;
• and
• a third trench shield electrode defined in the semiconductor region between the first trench shield electrode and the second trench shield electrode, the third trench shield electrode extending along the longitudinal axis in parallel with the first trench shield electrode and the second trench shield electrode, the third trench shield electrode having a first portion disposed in the active region and a second portion disposed in the termination region, the second portion of the third trench shield electrode extending, along the longitudinal axis, a second distance into the termination region from the active region, the second distance being less than the first distance.