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US 10,374,073 B2Granted
Single electron transistor with wrap-around gate
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Xin Miao, Wenyu Xu, Chen Zhang
Life of this patent
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Abstract
Transistors and methods of forming the same include forming a fin that has an active layer between two sacrificial layers. Material from the two sacrificial layers is etched away in a region of the fin. A gate stack is formed around the active layer in the region. Source and drain regions are formed in contact with the active layer.
Claims18
A method for forming a transistor, comprising:
- forming a fin comprising an active layer between two sacrificial layers;
- etching away material from the two sacrificial layers in a region of the fin;
- forming a gate stack around the active layer in the region;
- etching the active layer after forming the gate stack to form a quantum dot;
- and
- forming source and drain regions in contact with the active layer.
3 more elements
A method for forming a transistor, comprising:
- forming a fin comprising an active layer between two sacrificial layers;
- etching away material from the two sacrificial layers in a first region;
- forming a gate stack around the active layer in the first region;
- etching the active layer after forming the gate stack to form a quantum dot;
- etching away material from the two sacrificial layers outside the first region;
- and
- forming source and drain regions in contact with the active layer in the first region.
4 more elements
A transistor, comprising:
- a tunnel barrier structure;
- a gate stack that wraps fully around the tunnel barrier structure;
- a conductive source and drain region, in contact with opposite sides of the tunnel barrier structure, that pass through openings in respective sides of the gate stack.
Dependencies are inferred from the claim text.