Method and device for compound semiconductor fin structure

A method of manufacturing a semiconductor device, comprising:

• providing a substrate;
• forming a first semiconductor layer on the substrate;
• forming a stack of one or more semiconductor layer structures on the first semiconductor layer, each of the semiconductor layer structures including a first insulator layer and a second semiconductor layer on the first insulator layer, the first and second semiconductor layers having a same semiconductor compound;
• forming a fourth semiconductor layer on the substrate, wherein the first semiconductor layer is formed on the fourth semiconductor layer;
• and
• performing an etching process on the stack of one or more semiconductor layer structures and the first semiconductor layer to form a fin structure.

A method of manufacturing a semiconductor device, comprising:

• providing a substrate;
• forming a first semiconductor layer on the substrate;
• forming a stack of two or more semiconductor layer structures on the first semiconductor layer, each of the semiconductor layer structures including a first insulator layer and a second semiconductor layer on the first insulator layer, the first and second semiconductor layers having a same semiconductor compound, each of the semiconductor layer structures further comprising a third semiconductor layer below the first insulator layer, so that the first insulator layer is between the third semiconductor layer and the second semiconductor layer;
• performing an etching process on the stack of one or more semiconductor layer structures and the first semiconductor layer to form a fin structure.