Fin field effect transistor complementary metal oxide semiconductor with dual strained channels with solid phase doping

A method of forming a semiconductor device comprising:

• forming a first doped oxide having a first conductivity type dopant on a first region of a semiconductor substrate having a first lattice dimension, and forming a second doped oxide having a second conductivity type dopant on a second region of the semiconductor substrate;
• diffusing the first and second conductivity type dopants from the first and second doped oxides into the first and second region of the semiconductor substrate, wherein the first conductivity type dopant that diffuses into the first region of the substrate provides a first conductivity type punch through stop region, and the second conductivity type dopant that diffuses into the second region of the substrate provides a second conductivity type punch through stop region;
• removing the first and second doped oxides;
• forming at least a second semiconductor material having at least a second lattice dimension on the semiconductor substrate, wherein a difference between the first lattice dimensions and at least the second lattice dimension forms a strain in said at least said second semiconductor material layer;
• forming a first semiconductor device having a second conductivity type in the first region of the semiconductor substrate;
• and
• forming a second semiconductor device having a first conductivity type in the second region of the semiconductor substrate, wherein a channel region for each of the first and second semiconductor device is in direct contact with their respective first and second punch through stop region.

A method of forming a semiconductor device comprising:

• diffusing first and second conductivity type dopants from first and second doped oxides into first and second regions of a semiconductor substrate, wherein the first conductivity type dopant that diffuses into the first region of the substrate provides a first conductivity type punch through stop region, and the second conductivity type dopant that diffuses into the second region of the substrate provides a second conductivity type punch through stop region;
• forming at least a second semiconductor material having at least a second lattice dimension on the semiconductor substrate, wherein a difference between the first lattice dimensions and at least the second lattice dimension forms a strain in said at least said second semiconductor material layer;
• forming a first semiconductor device having a second conductivity type in the first region of the semiconductor substrate;
• and
• forming a second semiconductor device having a first conductivity type in the second region of the semiconductor substrate, wherein a channel region for each of the first and second semiconductor device is in direct contact with their respective first and second punch through stop region.