Array substrate, manufacturing method thereof and display panel
AssigneesBoe Technology Group Co., Ltd., Ordos Yuansheng Optoelectronics Co., Ltd.
InventorYanfei Sun
Life of this patent
Estimating the term…
Abstract
The present invention provides an array substrate, a manufacturing method thereof and a display panel. The array substrate includes a substrate and an insulation layer provided on the substrate, the insulation layer including a via therein formed by etching. The insulation layer further includes a plurality of insulation sub-layers stacked on each other, and an insulation sub-layer among the plurality of insulation sub-layers which is farther away from the substrate has a larger etching rate under an etching condition for forming the via.
Claims14
An array substrate, comprising a substrate and an insulation layer provided on the substrate, the insulation layer comprising a via therein formed by etching, wherein
- the insulation layer comprises a plurality of insulation sub-layers stacked on each other, and an insulation sub-layer among the plurality of insulation sub-layers which is farther away from the substrate has a larger etching rate under an etching condition for forming the via;
- each of the plurality of insulation sub-layers is a silicon nitride-containing layer;
- and
- an insulation sub-layer which is farther away from the substrate has a smaller ratio of the number of silicon-nitride bonds to that of silicon-hydrogen bonds.
A display panel, comprising an array substrate, which comprises a substrate and an insulation layer provided on the substrate, the insulation layer comprising a via therein formed by etching, wherein
- the insulation layer comprises a plurality of insulation sub-layers stacked on each other, and an insulation sub-layer among the plurality of insulation sub-layers which is farther away from the substrate has a larger etching rate under an etching condition for forming the via;
- each of the plurality of insulation sub-layers is a silicon nitride-containing layer;
- and
- an insulation sub-layer which is farther away from the substrate has a smaller ratio of the number of silicon-nitride bonds to that of silicon-hydrogen bonds.
A manufacturing method of an array substrate, comprising steps of
- forming a plurality of insulation sub-layers stacked on each other on a substrate sequentially, so that the plurality of insulation sub-layers form an insulation layer, and an insulation sub-layer among the plurality of insulation sub-layers which is farther away from the substrate has a larger etching rate;
- and
- etching the plurality of insulation sub-layers of the insulation layer to form a via, under a same etching condition;
- wherein each of the plurality of insulation sub-layers is a silicon nitride-containing layer, and an insulation sub-layer which is farther away from the substrate has a smaller ratio of the number of silicon-nitride bonds to that of silicon-hydrogen bonds.
Dependencies are inferred from the claim text.