Structure and formation method of semiconductor device structure with nanowires

A method for forming a semiconductor device structure, comprising:

• forming a first stack structure over a first fin portion in an input-output region of a substrate and a second stack structure over a second fin portion in a core region of the substrate;
• forming a first source/drain portion in the first stack structure and a second source/drain portion in the second stack structure;
• removing a portion of the first stack structure to form a first nanowire in the input-output region;
• removing a portion of the second stack structure to form a second nanowire in the core region;
• forming a dielectric layer surrounding the first nanowire;
• annealing the dielectric layer after the first nanowire is formed;
• forming a first gate structure surrounding the dielectric layer and the first nanowire, wherein the first gate structure is adjacent to the first source/drain portion;
• and
• forming a second gate structure surrounding the second nanowire, wherein the second gate structure is adjacent to the second source/drain portion.

A method for forming a semiconductor device structure, comprising:

• forming a stack structure over a substrate;
• forming a dummy gate structure over the stack structure, wherein the dummy gate structure has a dummy gate dielectric layer and a dummy gate electrode over the gate dielectric layer;
• forming a source/drain portion in the stack structure;
• forming an interlayer dielectric layer over the source/drain portion;
• forming a protective element over the interlayer dielectric layer;
• removing a portion of the stack structure to form a nanowire;
• and
• replacing the dummy gate structure with a gate structure, wherein the gate structure has a gate electrode and a gate dielectric layer surrounded by the gate electrode, the gate dielectric and the gate dielectric layer is thicker than the dummy gate dielectric layer, and
• wherein the nanowire is surrounded by the gate structure.