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US 10,374,058 B2Granted
Semiconductor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHuan-Chieh Su, Zhi-Chang Lin, Ting-Hung Hsu, Jia-Ni Yu, Wei-Hao Wu, Chih-Hao Wang
Life of this patent
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Abstract
A method for manufacturing a semiconductor device is provided. The method for manufacturing a semiconductor device includes forming a gate electrode layer in a gate trench; filling a recess in the gate electrode layer with a dielectric feature; and etching back the gate electrode layer from top end surfaces of the gate electrode layer while leaving a portion of the gate electrode layer under the dielectric feature.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- a plurality of gate spacers over the semiconductor substrate;
- a gate electrode between the gate spacers;
- a first dielectric feature between the gate spacers and in contact with a top surface of the gate electrode;
- and
- a second dielectric feature between the first dielectric feature and one of the gate spacers, wherein a sidewall of the first dielectric feature is at least partially separated from the second dielectric feature, wherein the gate electrode comprises a gate conductor and a work function conductor surrounding the gate conductor, the gate conductor is in contact with the first dielectric feature, and the work function conductor is separated from the first dielectric feature.
3 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a plurality of gate spacers over the semiconductor substrate;
- a gate conductor between the gate spacers;
- a work function conductor surrounding the gate conductor;
- and
- a first dielectric feature between the gate spacers and over the gate conductor, wherein the first dielectric feature is separated from the work function conductor and the gate conductor has a first portion higher than a bottom surface of the first dielectric feature.
3 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a plurality of first gate spacers over the semiconductor substrate;
- a first gate electrode between the first gate spacers;
- and
- a first dielectric feature between the first gate spacers and over the first gate electrode;
- and
- a second dielectric feature separating the first dielectric feature from the first gate spacers, wherein a bottom surface of the second dielectric feature is in contact with a top surface of the first gate electrode.
4 more elements
Dependencies are inferred from the claim text.