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US 10,374,057 B2Granted
Method of forming metal contacts in the barrier layer of a group III-N HEMT
AssigneeTexas Instruments Incorporated
InventorsYoshikazu Kondo, Shoji Wada, Hiroshi Yamasaki, Masahiro Iwamoto
Life of this patent
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Abstract
Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.
Claims9
A method of forming a high electron mobility transistor comprising:
- forming a channel layer over a substrate;
- forming a barrier layer over the channel layer, the barrier layer including a GaN material;
- etching the GaN material of the barrier layer with a gas combination that includes boron trichloride (BCl3) and sulfur hexafluoride (SF6) to form a number of metal contact openings, each of the metal contact openings having a bottom surface that lies above and spaced apart from a top surface of the channel layer;
- and
- etching the GaN material of the barrier layer exposed by the metal contact openings with a gas combination that includes boron trichloride (BCl3) and chlorine (Cl2) to deepen each metal contact opening to a second bottom surface, the second bottom surface lying above and spaced apart from the top surface of the channel layer.
2 more elements
Dependencies are inferred from the claim text.