Latch-up resistant transistor

A method, comprising:

• forming a drain region at a first side of a semiconductor body;
• forming a drift region of a first doping type above the drain region in the semiconductor body;
• forming a body region of a second doping type above the drift region in the semiconductor body;
• forming a source region of the first doping type in the body region at a second side of the semiconductor body opposite the first side;
• and
• forming a low-resistance region of the second doping type adjoining the source region in the body region,
• wherein forming the source region comprises implanting dopant particles of the first doping type using an implantation mask via a first surface of the semiconductor body into the body region,
• wherein implanting the doping particles of the first doping type comprises a tilted implantation,
• wherein forming the low-resistance region comprises implanting dopant particles of the second doping type using the implantation mask,
• wherein the method further comprises:
• forming a spacer on at least one sidewall of the implantation mask;
• and
• after forming the spacer, implanting dopant particles of the second doping type into the first surface of the semiconductor body to form the low-resistance region of the second doping type in the body region, the spacer preventing the dopant particles of the second doping type from being implanted into the body region in close proximity to an edge of the implantation mask covered by the spacer.