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US 10,374,054 B2Granted
Ferroelectric memory devices
AssigneeSK hynix Inc.
InventorHyangkeun Yoo
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Abstract
A ferroelectric memory device includes a substrate having a source electrode and a drain electrode therein, a first interfacial dielectric layer including an anti-ferroelectric material disposed on the substrate between the source electrode and the drain electrode, a ferroelectric gate dielectric layer including a ferroelectric material disposed on the first interfacial dielectric layer, and a gate electrode disposed on the ferroelectric gate dielectric layer.
Claims19
A ferroelectric memory device comprising:
- a substrate having a source electrode and a drain electrode;
- a first interfacial dielectric layer including an anti-ferroelectric material disposed on the substrate between the source electrode and the drain electrode;
- a ferroelectric gate dielectric layer including a ferroelectric material disposed on the first interfacial dielectric;
- and
- a gate electrode disposed on the ferroelectric gate dielectric layer,
- wherein lattice constants of the first interfacial dielectric layer is substantially identical to lattice constants of the ferroelectric gate dielectric layer.
3 more elements
A ferroelectric memory device comprising:
- a semiconductor substrate;
- an insulation layer disposed on the semiconductor substrate;
- a first interfacial dielectric layer including an anti-ferroelectric material disposed on the insulation layer;
- a ferroelectric gate dielectric layer including a ferroelectric material disposed on the first interfacial dielectric;
- and
- a gate electrode disposed on the ferroelectric gate dielectric layer,
- wherein the first interfacial dielectric layer has a dielectric constant which is greater than a dielectric constant of the insulation layer, and
- wherein lattice constants of the first interfacial dielectric layer are substantially identical to lattice constants of the ferroelectric gate dielectric layer.
5 more elements
Dependencies are inferred from the claim text.