Method for fabricating semiconductor device

Abstract

A method for fabricating semiconductor device includes the steps of: forming a silicon layer on a substrate; forming a metal silicon nitride layer on the silicon layer; forming a stress layer on the metal silicon nitride layer; performing a thermal treatment process; removing the stress layer; forming a conductive layer on the metal silicon nitride layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.

Dependencies are inferred from the claim text.