Semiconductor device and electric apparatus using same

Abstract

A semiconductor device 1 which comprises a pair of an ohmic electrode 20 and a Schottky electrode 10 separated from each other, and a semiconductor layer 30 in contact with the ohmic electrode 20 and the Schottky electrode 10, and which satisfies the following formula (I): n < ɛ ⁢ ⁢ V e qL 2 ( I ) in which n is a carrier concentration (cm−3) of the semiconductor layer, ε is a dielectric constant (F/cm) of the semiconductor layer, Ve is a forward effective voltage (V) between the ohmic electrode and the Schottky electrode, q is an elementary charge (C), and L is a distance (cm) between the ohmic electrode and the Schottky electrode.

Dependencies are inferred from the claim text.