Field effect transistor with controllable resistance
AssigneeInternational Business Machines Corporation
InventorsYulong Li, Paul M. Solomon, Siyuranga Koswatta
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Abstract
Embodiments of the invention are directed to a method and resulting structures for a semiconductor device having a controllable resistance. An example method for forming a semiconductor device includes forming a source terminal and a drain terminal of a field effect transistor (FET) on a substrate. The source terminal and the drain terminal are formed on either sides of a channel region. An energy barrier is formed adjacent to the source terminal and the channel region. A conductive gate is formed over the channel region.
Claims7
A method for forming a semiconductor device, the method comprising:
- forming a source terminal and a drain terminal of a field effect transistor (FET) on a substrate, the source terminal and the drain terminal formed on either side of a channel region by recessing the substrate;
- forming an energy barrier adjacent to the source terminal and the channel region by etching the energy barrier in recesses formed by the recessing;
- and
- forming a conductive gate over the channel region.
Dependencies are inferred from the claim text.