Enhanced field bipolar resistive RAM integrated with FDSOI technology

A method of forming a semiconductor structure, the method comprising:

• forming a gate structure on a topmost surface of a fully depleted semiconductor channel material layer;
• forming a faceted drain-side structure on the topmost surface of the fully depleted semiconductor channel material layer and on a first side of the gate structure, and a faceted source-side structure on the topmost surface of the fully depleted semiconductor channel material layer and on a second side of the gate structure that is opposite the first side;
• forming an interlayer dielectric (ILD) material laterally adjacent the gate stack and atop the faceted drain-side structure, and atop the faceted source-side structure;
• forming a contact opening in the ILD material to physically expose a surface of the faceted drain-side structure;
• and
• forming a resistive random access memory stack in the contact opening and on the physically exposed surface of the faceted drain-side structure.