Incoherent type-III materials for charge carriers control devices

A semiconductor junction comprising:

• a first semiconductor material;
• and
• a second material;
• wherein the first semiconductor material and the second material are extrinsically undoped, wherein the first semiconductor material is a group III-nitride heterostructure or group III-nitride multiple quantum well structure such that the first semiconductor material comprises In1-xGaxN wherein 0<x≤0.2, and the second material comprises a layer within the first semiconductor material formed by In1-xGaxP wherein 0<x≤0.6, so that a broken- gap band alignment is formed between the first semiconductor material and the second material, and
• wherein at least a portion of a valence band of the second material has a higher energy level than at least a portion of a conduction band of the first semiconductor material such that an interface between the first semiconductor material and the second material creates a flow of a majority of carriers across the semiconductor junction that is diffusive, and the interface of the first semiconductor material and the second material is configured such that a region of generation or recombination of a plurality of the carriers is confined to a two-dimensional surface of the second material.