Semiconductor device resistor structure
AssigneeGLOBAL FOUNDRIES Inc.
InventorsHui Zang, Josef S. Watts, Shesh M. Pandey
Life of this patent
Estimating the term…
Abstract
A resistor body is separated from a doped well in a substrate by a resistor dielectric material layer. The doped well is defined by at least one doped region and can include a dopant gradient in the doped well to reduce parasitic capacitance of the resistor structure while retaining heat dissipation properties of the substrate. The resistor body is formed in a cavity in a dielectric layer deposited on the substrate, which deposition can be part of a concurrent fabrication, such as part of forming shallow trench isolations, and the cavity can be lined with the resistor dielectric material.
Claims16
A method of making a semiconductor device resistor structure, the method comprising:
- providing a first semiconductor layer including a first semiconductor material;
- depositing a support dielectric material on the first semiconductor layer to form a support dielectric layer on a surface of the first semiconductor layer;
- forming a plurality of cavities in the support dielectric layer, each cavity extending from a surface of the support dielectric layer to the surface of the first semiconductor layer;
- forming a well region in the first semiconductor layer by doping the first semiconductor layer to form at least one doped region, the plurality of cavities including at least one resistor cavity over the well region and at least two gate cavities outside of the well region;
- depositing a resistor dielectric layer on at least the surface of the first semiconductor layer exposed in the plurality of cavities;
- forming a resistor body in each resistor cavity and on the resistor dielectric layer, the forming of the resistor body in each resistor cavity including depositing a resistive material in each resistor cavity, the depositing of the resistive material including filling the at least two gate cavities with the resistive material;
- removing the resistive material from the at least two gate cavities;
- and
- depositing a gate material at least in the gate cavities.
A method of making a semiconductor device resistor structure, the method comprising:
- providing a first semiconductor layer including a first semiconductor material;
- depositing a support dielectric material on the first semiconductor layer to form a support dielectric layer on a surface of the first semiconductor layer;
- forming a plurality of cavities in the support dielectric layer, each cavity extending from a surface of the support dielectric layer to the surface of the first semiconductor layer;
- forming a well region in the first semiconductor layer by doping the first semiconductor layer to form at least one doped region, the plurality of cavities including at least one resistor cavity over the well region;
- depositing a resistor dielectric layer on at least the surface of the first semiconductor layer exposed in the plurality of cavities;
- forming gate bodies by depositing a gate material in the plurality of cavities, the depositing of the gate material including filling the at least one resistor cavity with the gate material;
- and
- forming a resistor body in each resistor cavity and on the resistor dielectric layer, the forming of the resistor body in each resistor cavity including removing the gate material from the at least one resistor cavity and depositing a resistive material in the at least one resistor cavity.
A method of making a semiconductor device resistor structure, the method comprising:
- providing a first semiconductor layer including a first semiconductor material;
- depositing a support dielectric material on the first semiconductor layer to form a support dielectric layer on a surface of the first semiconductor layer;
- forming a plurality of cavities in the support dielectric layer, each cavity extending from a surface of the support dielectric layer to the surface of the first semiconductor layer;
- forming a well region in the first semiconductor layer by doping the first semiconductor layer to form at least one doped region, the plurality of cavities including at least one resistor cavity over the well region, the forming of the well region by doping including implanting a first dopant at a first concentration at a first distance from the surface of the first semiconductor layer and implanting the first dopant at a second concentration at a second distance from the surface of the first semiconductor layer that is greater than the first distance, the first concentration being higher than the second concentration;
- depositing a resistor dielectric layer on at least the surface of the first semiconductor layer exposed in the plurality of cavities;
- and
- forming a resistor body in each resistor cavity and on the resistor dielectric layer.
Dependencies are inferred from the claim text.