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US 10,374,013 B2Granted
Methods and apparatus for three-dimensional nonvolatile memory
AssigneeSanDisk Technologies LLC
InventorsAbhijit Bandyopadhyay, Christopher J. Petti, Natalie Nguyen, Brian Le
Life of this patent
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Abstract
A method is provided that includes forming a bit line above a substrate; forming a word line above the substrate, and forming a non-volatile memory cell between the bit line and the word line. The non-volatile memory cell includes a non-volatile memory material coupled in series with an isolation element. The isolation element includes a first electrode, a second electrode, and a semiconductor layer and a barrier layer disposed between the first electrode and the second electrode.
Claims18
A method comprising:
- forming a bit line above a substrate;
- forming a word line above the substrate;
- etching the word line to form a void adjacent an end of the word line;
- forming a non-volatile memory material in the void;
- and
- forming a non-volatile memory cell between the bit line and the word line, the non-volatile memory cell comprising the non-volatile memory material coupled in series with an isolation element,
- wherein:
- the isolation element comprises a first electrode, a second electrode, and a semiconductor layer and a barrier layer disposed between the first electrode and the second electrode.
5 more elements
A method comprising:
- forming a bit line disposed in a first direction above a substrate;
- forming a word line disposed in a second direction above the substrate, the second direction perpendicular to the first direction;
- etching the word line to form a void at an end of the word line;
- and
- forming a non-volatile memory cell at an intersection of the bit line and the word line by:
- forming a non-volatile memory material in the void;
- and
- forming an isolation element adjacent the non-volatile memory material, the isolation element comprising a first electrode, a second electrode, and a semiconductor layer and a barrier layer disposed between the first electrode and the second electrode.
5 more elements
Dependencies are inferred from the claim text.