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US 10,374,011 B2Granted
Resistance change memory devices
AssigneeSK hynix Inc.
InventorSanghun Lee
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Abstract
A resistance change memory device includes a lower electrode, a ferroelectric material layer disposed on the lower electrode, a resistance switching material layer disposed on the ferroelectric material layer, and an upper electrode disposed on the resistance switching material layer.
Claims20
A resistance change memory device comprising:
- a lower electrode;
- a ferroelectric material layer disposed on the lower electrode;
- a resistance switching material layer disposed on the ferroelectric material layer;
- and
- an upper electrode disposed on the resistance switching material layer,
- wherein the resistance change memory device further comprises an interfacial insulation layer located between the upper electrode and the resistance switching material layer, and
- wherein formation or decomposition of the interfacial insulation layer is controlled by an external voltage between the lower electrode and the upper electrode.
4 more elements
A resistance change memory device comprising:
- a lower electrode;
- a ferroelectric material layer disposed on the lower electrode having a remanent polarization;
- a resistance switching material layer including movable oxygen ions disposed on the ferroelectric material layer;
- and
- an upper electrode disposed on the resistance switching material layer,
- wherein a resistance value of the resistance change memory device is determined according to formation or decomposition of an interfacial insulation layer located between the upper electrode and the resistance switching material layer when an external voltage is applied to the upper electrode while the lower electrode is grounded.
3 more elements
Dependencies are inferred from the claim text.