Phase change memory structure and manufacturing method for the same

A semiconductor device, comprising:

• a transistor;
• a first metallization layer over the transistor;
• a phase change material over the first metallization layer;
• a second metallization layer over the phase change material;
• a dielectric layer between the first metallization layer and the second metallization layer, surrounding the phase change material;
• and
• a heater in the dielectric layer and in contact with the phase change material;
• and
• wherein the heater comprises a heat insulation shell and a heat conducting core, the heat insulation shell obstructing heat dissipation from the heat conducting core.

A method for manufacturing a phase change memory structure, comprising:

• forming a bottom electrode;
• forming a dielectric layer over the bottom electrode, the dielectric layer patterned with a contact trench;
• depositing a heat insulation layer having an effective first thermal conductivity in a sidewall and a bottom of the contact trench;
• filling the contact trench with a heat conductive material having a second thermal conductivity greater than the effective first thermal conductivity;
• planarizing the first material, the second material, and the dielectric layer to form a coplanar surface of the first material, the second material, and the dielectric layer;
• oxidizing the coplanar surface to obtain oxygen derivatives of the first material and the second material before forming the phase change material;
• and
• forming a phase change material over and in contact with the coplanar surface.