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US 10,374,007 B2Granted
Memory including a selector switch on a variable resistance memory cell
AssigneeMicron Technology, Inc.
InventorsAndrea Redaelli, Agostino Pirovano
Life of this patent
Estimating the term…
Abstract
Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch in direct contact with the memory cell, and configured to facilitate access to the memory cell. Other embodiments may be described and claimed.
Claims20
A method comprising:
- forming a sealing layer on a portion of a selector switch and a portion of a memory cell;
- forming a plurality of dielectric layers in contact with a portion of the memory cell;
- forming a conductive plug in contact with and disposed on a portion of a surface of the sealing layer;
- and
- forming a diffusion barrier in contact with a pair of sidewalls of the conductive plug.
2 more elements
A memory array comprising:
- a plurality of memory cells, each memory cell of the plurality coupled with a corresponding bit line and a corresponding word line;
- a plurality of selector switches, each selector switch of the plurality in contact with a corresponding memory cell of the plurality;
- a sealing layer in contact with an upper surface and a pair of sidewalls of each of the selector switches and a pair of sidewalls of each of the memory cells;
- a plurality of conductive plugs, each conductive plug of the plurality in contact with a corresponding memory cell of the plurality and disposed on a portion of the sealing layer;
- and
- a plurality of diffusion barriers, each diffusion barrier in contact with a corresponding conductive plug of the plurality.
3 more elements
A method for forming a memory device, comprising:
- forming a sealing layer on a surface and a pair of sidewalls of a selector switch and a pair of sidewalls of a memory cell;
- forming a conductive plug in contact with and disposed on a portion of a surface of the sealing layer;
- and
- forming a diffusion barrier in contact with a pair of sidewalls of the conductive plug.
1 more element
Dependencies are inferred from the claim text.