Semiconductor light emitting device and LED module using the same

A semiconductor light emitting device, comprising:

• a semiconductor stack having a first surface and a second surface opposite each other, the semiconductor stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer between the first and second conductivity-type semiconductor layers, the first surface and the second surface being defined by the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively, and the semiconductor stack being divided into a plurality of light emitting cells by a mesa region;
• an insulating layer on the second surface of the semiconductor stack and having a first opening and a second opening defining a first contact region of the first conductivity-type semiconductor layer and a second contact region of the second conductivity-type semiconductor layer, respectively;
• a connection electrode on the insulating layer and connecting a first contact region and a second contact region of different light emitting cells to allow the plurality of light emitting cells to be electrically connected to each other;
• a transparent bonding layer to cover the first surface of the semiconductor stack;
• and
• a transparent support substrate having a first surface bonded to the first surface of the semiconductor stack by the transparent bonding layer and a second surface opposite to the first surface,
• wherein the mesa region extends only partially through the first conductivity-type semiconductor layer, and
• wherein a crystal orientation of a first surface of the transparent support substrate that faces the first conductivity-type semiconductor layer is different from a crystal orientation of a first surface of the first conductivity-type semiconductor layer that faces the transparent support substrate.

A light emitting diode (LED) module, comprising:

• a circuit board having a bar shape, in which a first connection terminal and a second connection terminal are on a first surface;
• at least one LED chip on the first surface of the circuit board, the at least one LED chip being connected to the first connection terminal and the second connection terminal;
• and
• a wavelength conversion portion on at least one of the first surface of the circuit board or a second surface of the circuit board opposite the first surface,
• wherein the at least one LED chip includes:
• a plurality of light emitting cells having a first surface and a second surface opposing each other, the plurality of light emitting cells including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer between the first and second conductivity-type semiconductor layers,
• an insulating layer on the second surface of the plurality of light emitting cells and having a first opening and a second opening defining a first contact region of the first conductivity-type semiconductor layer and a second contact region of the second conductivity-type semiconductor layer, respectively,
• a connection electrode on the insulating layer and connecting a first contact region and a second contact region of adjacent light emitting cells among the plurality of light emitting cells,
• a transparent support substrate on the first surface of the plurality of light emitting cells, the transparent support substrate and the circuit board being on opposite surfaces of the at least one LED chip, and
• a transparent bonding layer disposed between the plurality of light emitting cells and the transparent support substrate,
• wherein a crystal orientation of a first surface of the transparent support substrate that faces the first conductivity-type semiconductor layer is different from a crystal orientation of a first surface of the first conductivity-type semiconductor layer that faces the transparent support substrate.