Display device and electronic device

A display device comprising:

• a pixel circuit including a first element layer comprising a first transistor and a second element layer comprising a second transistor;
• and a light-emitting element including a first conductive layer, an Electro-Luminescent (EL) layer over the first conductive layer, a second conductive layer, wherein a channel formation region of the first transistor comprises silicon, wherein a channel formation region of the second transistor comprises a metal oxide functioning as a semiconductor, wherein the first transistor is configured to drive the light-emitting element, wherein the second transistor functions is configured to operate as a switch for supplying voltage to a gate of the first transistor, wherein the second element layer is provided over the first element layer, wherein the light-emitting element is provided over the second element layers wherein an insulating layer is provided on and in contact with an end portion of the first conductive layer, and wherein the EL layer is overlapping with the channel formation region of the first transistor, the channel formation region of the second transistor, and the insulating layer.

A display device comprising:

• a pixel circuit including a first element layer comprising a first transistor and a second element layer comprising a second transistor;
• a light-emitting element including a first conductive layer, an Electro-Luminescent (EL) layer over the first conductive layer, a second conductive layer;
• and a driver circuit comprising a fourth transistor, wherein a channel formation region of each of the First transistor and the fourth transistor comprises silicon, wherein a channel formation region of the second transistor comprises a metal oxide functioning as a semiconductor, wherein the first transistor is configured to drive the light-emitting element, wherein the second transistor functions is configured to operate as a switch for supplying voltage to a gate of the first transistor, wherein the second element layer is provided over the first element layer, wherein an insulating layer is provided on and in contact with an end portion of the first conductive layer, and wherein the EL layer is overlapping with the channel formation region of each of the first transistor and the fourth transistor, the channel formation region of the second transistor, and the insulating layer.

A display device comprising:

• a pixel circuit including a first element layer comprising a first transistor and a second element layer comprising a second transistor;
• a light-emitting element including a first conductive layer an Electro-Luminescent (EL) layer over the first conductive layer, a second conductive layer;
• and a driver circuit comprising a fourth transistor, wherein a channel formation region of each of the first transistor and the fourth transistor comprises silicon, wherein a channel formation region of the second transistor comprises a metal oxide functioning as a semiconductor, wherein the first transistor is configured to drive the light-emitting element, wherein the second transistor functions is configured to operate as a switch for supplying voltage to a gate of the first transistor, wherein the second element layer is provided over the first element layer, wherein the light-emitting element is provided over the second element layer, wherein an insulating layer is provided on and in contact with an end portion of the first conductive layer, and wherein the EL layer is overlapping with the channel formation region of each of the first transistor and the fourth transistor, the channel formation region of the second transistor, and the insulating layer.