Semiconductor device, manufacturing method thereof, module, and electronic device

A semiconductor device comprising:

• a transistor comprising:
• a first conductive film;
• a first insulating film over the first conductive film;
• a second insulating film over the first insulating film;
• an oxide semiconductor film over the second insulating film;
• a pair of electrodes in contact with the oxide semiconductor film;
• a third insulating film over the oxide semiconductor film;
• and
• a second conductive film overlapping with the oxide semiconductor film with the third insulating film therebetween,
• wherein an end portion of the third insulating film is positioned on the outer side than an end portion of the second conductive film,
• a capacitor comprising:
• a third conductive film;
• the first insulating film over the third conductive film;
• a fourth insulating film over the first insulating film;
• and
• a fourth conductive film over the fourth insulating film, and
• a fifth insulating film over and in contact with a top surface of the second conductive film and a top surface of the fourth conductive film,
• wherein the second insulating film comprises an opening,
• wherein the fourth insulating film is in the opening,
• wherein the oxide semiconductor film comprises:
• a first region overlapping with the first conductive film;
• and
• a pair of second regions between which the first region is interposed,
• wherein a first resistivity of the first region is higher than a second resistivity of the second regions,
• wherein the first conductive film and the third conductive film are provided on the same surface, and
• wherein an end portion of the fourth insulating film is positioned on the outer side than an end portion of the fourth conductive film.

A semiconductor device comprising:

• a transistor comprising:
• a first conductive film;
• a first insulating film over the first conductive film;
• a second insulating film over the first insulating film;
• an oxide semiconductor film over the second insulating film;
• a pair of electrodes in contact with the oxide semiconductor film;
• a third insulating film over the oxide semiconductor film;
• and
• a second conductive film overlapping with the oxide semiconductor film with the third insulating film therebetween,
• wherein an end portion of the third insulating film is positioned on the outer side than an end portion of the second conductive film, and
• wherein the end portion of the third insulating film is curved,
• a capacitor comprising:
• a third conductive film;
• the first insulating film over the third conductive film;
• a fourth insulating film over the first insulating film;
• and
• a fourth conductive film over the fourth insulating film, and
• a fifth insulating film over and in contact with a top surface of the second conductive film and a top surface of the fourth conductive film,
• wherein the second insulating film comprises an opening,
• wherein the fourth insulating film is in the opening,
• wherein the end portion of the fourth insulating film is curved,
• wherein the oxide semiconductor film comprises:
• a first region overlapping with the first conductive film;
• and
• a pair of second regions between which the first region is interposed,
• wherein a first resistivity of the first region is higher than a second resistivity of the second regions,
• wherein the first conductive film and the third conductive film are provided on the same surface, and
• wherein an end portion of the fourth insulating film is positioned on the outer side than an end portion of the fourth conductive film.