US 10,373,977 B2 · Transistor fin formation via cladding on sacrificial core

Abstract

Techniques are disclosed for customization of fin-based transistor devices to provide a diverse range of channel configurations and/or material systems, and within the same integrated circuit die. In accordance with an embodiment, sacrificial fins are cladded and then removed thereby leaving the cladding layer as a pair of standalone fins. Once the sacrificial fin areas are filled back in with a suitable insulator, the resulting structure is fin-on-insulator. The new fins can be configured with any materials by using such a cladding-on-core approach. The resulting fin-on-insulator structure is favorable, for instance, for good gate control while eliminating or otherwise reducing sub-channel source-to-drain (or drain-to-source) leakage current. In addition, parasitic capacitance from channel-to-substrate is significantly reduced. The sacrificial fins can be thought of as cores and can be implemented, for example, with material native to the substrate or a replacement material that enables low-defect exotic cladding materials combinations.

Claims20

Dependent claims

An integrated circuit device, comprising:

a substrate having one or both of (i) a plurality of covered fins extending from the substrate and/or (ii) a plurality of covered recesses extending into the substrate, wherein each covered fin and/or recess is covered by an insulation layer;
and
a fin-pair above each covered fin and/or recess, each fin-pair comprising a semiconductor material, wherein the insulation layer is between the substrate and the fin-pair, such that a thickness of the insulation layer separates each fin-pair from its underlying covered fin or recess.

Dependencies are inferred from the claim text.

Transistor fin formation via cladding on sacrificial core

Life of this patent

Transistor fin formation via cladding on sacrificial core

Life of this patent

Abstract

Claims20