Method of writing to memory circuit using resistive device

A method of writing to a memory cell, comprising:

• turning on a pulling device of the memory cell and thereby pulling a voltage level at a first data node of the memory cell toward a first supply voltage level;
• the pulling device being coupled to a first conductive segment in a first conductive layer of the memory cell;
• a source of the first supply voltage level being coupled to a second conductive segment in a second conductive layer of the memory cell;
• turning on a pass gate of the memory cell and thereby pulling the voltage level at the first data node of the memory cell toward a second supply voltage level, the second supply voltage level being different from the first supply voltage level;
• and
• weakening a driving capability of the pulling device;
• wherein:
• the memory cell includes a via layer is disposed between the first and second conductive layers;
• the via layer includes first-type vias and second-type vias, each of the first-type vias having a first resistance value, each of the second-type vias having a second resistance value, and the second resistance value being substantially greater than the first resistance value;
• and
• the weakening includes:
• using at least one of the first-type vias to couple the first conductive segment in the first conductive layer to the second conductive segment in the second conductive layer.

A method of writing to a memory cell, comprising:

• turning on a pulling device of the memory cell and thereby pulling a voltage level at a first data node of the memory cell toward a first supply voltage level;
• turning on a pass gate of the memory cell and thereby pulling the voltage level at the first data node of the memory cell toward a second supply voltage level, the second supply voltage level being different from the first supply voltage level;
• and
• weakening a driving capability of the pulling device;
• wherein:
• the pulling device is located in a first layer of a memory device;
• and
• the weakening includes:
• using, in order to couple the pulling device and a source of the first supply voltage level, a conductive path which includes a resistive device, the resistive device being is located in a second layer of the memory cell.