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US 10,373,957 B2Granted
Capacitor structure and fabrication method thereof
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorsFeng-Yi Chang, Fu-Che Lee, Yi-Wang Zhan, Chieh-Te Chen
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Abstract
A capacitor structure includes a semiconductor substrate, a dielectric layer disposed on the semiconductor substrate, a storage node pad disposed in the dielectric layer, and a cylindrical lower electrode including a bottom portion recessed into the dielectric layer and in contact with the storage node pad. The bottom extends to a sidewall of the storage node pad.
Claims12
A capacitor structure, comprising:
- a semiconductor substrate;
- a dielectric layer on the semiconductor substrate;
- a storage node pad in the dielectric layer, wherein the storage node pad has a T-shaped cross-sectional profile;
- a lower electrode comprising a bottom portion recessed into the dielectric layer and being in direct contact with the storage node pad, wherein the bottom portion extends to a sidewall of the storage node pad;
- and
- a lattice layer supporting a topmost part of the lower electrode, wherein the lattice layer is not directly contacting the dielectric layer, but is directly contacting the topmost part of the lower electrode.
3 more elements
Dependencies are inferred from the claim text.