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US 10,373,949 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeMediatek Inc.
InventorsYan-Liang Ji, Cheng-Hua Lin, Chih-Chung Chiu
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Abstract
A semiconductor device includes a semiconductor substrate and a passive component. The passive component is formed on the semiconductor substrate and includes a first polysilicon (poly) layer, a salicide blockage (SAB) layer and a first salicide layer. The SAB layer is formed on the first poly layer. The first salicide layer is formed on the SAB layer.
Claims12
A semiconductor device, comprising:
- a semiconductor substrate;
- and
- a passive component formed on the semiconductor substrate and comprising:
- a first polysilicon (poly) layer;
- a salicide blockage (SAB) layer formed on the first poly layer;
- and
- a first salicide layer covering the entire upper surface of the SAB layer.
4 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- and
- a passive component formed on the semiconductor substrate and comprising:
- a first polysilicon (poly) layer;
- a salicide blockage (SAB) layer formed on the first poly layer;
- and
- a first salicide layer formed on the SAB layer;
- wherein the first poly layer has two terminal portions projected with respect to two lateral surfaces of the SAB layer respectively.
5 more elements
Dependencies are inferred from the claim text.