Diode-triggered Schottky silicon-controlled rectifier for Fin-FET electrostatic discharge control

A fin-type field effect transistor (FinFET) structure comprising:

• a p-type substrate;
• a silicon-controlled rectifier (SCR) over the p-type substrate, the SCR including:
• a p-well region and an adjacent n-well region over the substrate;
• a negatively charged fin over the p-well region,
• wherein the SCR includes a P-N-P-N switch including the p-type substrate, the n-well region, the p-well region and the negatively charged fin;
• and
• a positively charged fin over the p-well region and an additional negatively charged fin over the n-well region;
• and
• a Schottky diode electrically coupled with the SCR, the Schottky diode including a gate in the n-well region, the Schottky diode positioned to mitigate electrostatic discharge (ESD) across the negatively charged fin over the p-well region and the n-well region in response to application of a forward voltage across the gate,
• wherein the negatively charged fin over the p-well region acts as an anode region of the Schottky diode.