Semiconductor device having electro-static discharge protection structure

A semiconductor device having an electrostatic discharge (ESD) protection structure, wherein the ESD protection structure is a diode coupled between a gate and a source of the semiconductor device, the semiconductor device comprises a substrate, a field oxide layer and a gate oxide layer formed on the substrate, the diode comprises a diode body and two connecting portions coupled to both ends of the diode body, the two connecting portions are configured to be electrically coupled to the gate and the source, respectively;

• two insulating pads separated from each other are provided on the substrate, an insulating layer having a thickness less than the two insulating pads is provided on a surface of the substrate which is between the two insulating pads, the diode body is provided on the insulating layer, and the two connecting portions extend respectively from one end of the diode body to the corresponding insulating pad;
• a dielectric layer is provided on the diode and the two insulating pads, a metal wire layer is provided on the dielectric layer, the metal wire layer comprises a first metal leading-out electrically coupled to the gate and a second metal leading-out electrically coupled to the source, and the first metal leading-out and the second metal leading-out are respectively coupled to one connecting portion through a contact hole penetrating through the dielectric layer.