Semiconductor device, manufacturing method for semiconductor device, and electronic device

A semiconductor device comprising:

• a first chip including a first semiconductor substrate and a first wiring;
• a second chip bonded to a first surface side of the first chip and including a second semiconductor substrate and a second wiring;
• a through electrode disposed from a second surface side of the first chip to the second wiring in the second chip;
• and
• an insulation layer disposed between the through electrode and the first semiconductor substrate in the first chip,
• wherein the through electrode is electrically connected to the first wiring and the second wiring and the through electrode is disposed through the first wiring, and
• wherein a first contact area of the through electrode is disposed on the first surface side of the first wiring, a second contact area of the through electrode is disposed on the second surface side of the first wiring, and the second contact area is larger than the first contact area in a cross section view.

A semiconductor device comprising:

• a first chip including a first semiconductor substrate and a first wiring;
• a second chip bonded to a first surface side of the first chip and including a second semiconductor substrate and a second wiring;
• a through electrode disposed from a second surface side of the first chip to the second wiring in the second chip;
• and
• an insulation layer disposed between the through electrode and the first semiconductor substrate in the first chip,
• wherein the through electrode is electrically connected to the first wiring and the second wiring and the through electrode is disposed through the first wiring, and
• wherein a first slope of the through electrode is disposed in the first wiring, a second slope of the through electrode is disposed in the first surface side of the first substrate more than the first wiring, and the first slope and the second slope are different in a cross section view.