Semiconductor package structure and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJeng-Nan Hung, Chun-Hui Yu, Kuo-Chung Yee, Yi-Da Tsai, Wei-Hung Lin, Ming-Da Cheng, Ching-Hua Hsieh
Life of this patent
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Abstract
A method of manufacturing a semiconductor package structure is provided. A stacked structure formed over the carrier substrate is provided, wherein the stacked structure has a channel with an opening. The stacked structure is immersed into a fluidic molding material to render the fluidic molding material flow into the channel through the openings.
Claims18
A method of manufacturing a semiconductor package structure, comprising:
- providing a stacked structure formed over a carrier substrate, wherein the stacked structure comprises a plurality of first dies over the carrier substrate and spaced from each other, and a second die over the plurality of first dies, and the carrier substrate, the plurality of first dies and the second die defining a channel with an opening;
- and
- immersing the plurality of first dies and the second die of the stacked structure into a fluidic molding material to render the fluidic molding material flow into the channel through the opening, wherein the second die of the stacked structure is immersed into the fluidic molding material prior to the plurality of first dies are immersed into the fluidic molding material, wherein immersing the stacked structure into the fluidic molding material is performed in a reaction chamber, and the method further comprises vacuuming the reaction chamber during immersing the stacked structure into the fluidic molding material.
A method of manufacturing a semiconductor package structure, comprising:
- providing a stacked structure having a channel with an opening;
- disposing the channel in a fluidic material at a first depth, wherein a first portion of the opening is immersed into the fluidic material at the first depth to render the fluidic material flow into the channel through the first portion of the opening, and residual air in the channel is exhausted from a second portion of the opening;
- and
- disposing the channel in the fluidic material at a second depth, wherein the second portion of the opening is further immersed into the fluidic material to render the fluidic material flow into the channel, wherein immersing the stacked structure into the fluidic molding material is performed in a reaction chamber, and the method further comprises vacuuming the reaction chamber during immersing the stacked structure into the fluidic molding material.
A method of manufacturing a semiconductor package structure, comprising:
- providing a stacked structure, wherein the stacked structure comprises a plurality of first dies spaced from each other, and a second die over the plurality of first dies, and the plurality of first dies and the second die define a channel with two or more openings;
- disposing the stacked structure in a reaction chamber;
- and
- immersing the plurality of first dies and the second die of the stacked structure into a fluidic molding material in the reaction chamber,
- wherein the method further comprises vacuuming the reaction chamber during immersing the stacked structure into the fluidic molding material to render the fluidic molding material flow into the channel through the openings, wherein the second die of the stacked structure is immersed into the fluidic molding material prior to the plurality of first dies are immersed into the fluidic molding material.
Dependencies are inferred from the claim text.