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US 10,373,923 B2Granted
Package with passive devices and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShuo-Mao Chen, Der-Chyang Yeh, Li-Hsien Huang
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Abstract
An embodiment is a device comprising a substrate, a metal pad over the substrate, and a passivation layer comprising a portion over the metal pad. The device further comprises a metal pillar over and electrically coupled to the metal pad, and a passive device comprising a first portion at a same level as the metal pillar, wherein the first portion of the passive device is formed of a same material as the metal pillar.
Claims19
A structure comprising:
- a conductive pad over a substrate;
- a passivation layer over the substrate;
- a conductive pillar over and electrically coupled to the conductive pad, the conductive pillar being in and physically contacting the passivation layer;
- a molding compound surrounding the substrate and the passivation layer;
- and
- a passive device comprising a first portion in and physically contacting the passivation layer, and a second portion overlying the molding compound, a surface of the molding compound being level with top surfaces of the conductive pillar and the first portion of the passive device;
- a dielectric layer over and physically contacting the conductive pillar, the first portion of the passive device, the passivation layer, and the molding compound;
- a conductive interconnect over and physically contacting the dielectric layer, the conductive interconnect being electrically coupled to the conductive pillar;
- and
- a first via in the dielectric layer, the first via electrically coupling the conductive interconnect and the conductive pillar.
7 more elements
A device comprising:
- a metal pad over a substrate;
- a first passivation layer over the substrate;
- a second passivation layer over the first passivation layer;
- a molding compound surrounding and physically contacting the substrate, the first passivation layer, and the second passivation layer;
- a metal pillar over and electrically coupled to the metal pad, the metal pillar extending through the first and second passivation layers;
- and
- a passive device comprising a first portion and a second portion, the first portion being over the first passivation layer and in the second passivation layer, the second portion being over the first portion, the first portion of the passive device having a same material composition as the metal pillar, top surfaces of the metal pillar, the first portion of the passive device, and the second passivation layer being level with each other.
4 more elements
A structure comprising:
- a die comprising:
- a semiconductor substrate;
- a conductive pad over the semiconductor substrate;
- a passivation layer over the semiconductor substrate and partially over the conductive pad;
- and
- a conductive pillar over and electrically coupled to the conductive pad, the conductive pillar being in and physically contacting the passivation layer;
- an encapsulant laterally surrounding the die;
- a dielectric layer over and physically contacting the conductive pillar, the passivation layer, and the encapsulant;
- a post-passivation interconnect (PPI) line over the dielectric layer and electrically coupled to the conductive pad through the conductive pillar and a via in the dielectric layer;
- and
- a passive device comprising a first portion in the passivation layer, and a second portion over the dielectric layer.
8 more elements
Dependencies are inferred from the claim text.