Dielectric thermal conductor for passivating eFuse and metal resistor
AssigneeInternational Business Machines Corporation
InventorsQing Cao, Kangguo Cheng, Zhengwen Li, Fei Liu
Life of this patent
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Abstract
A semiconductor device includes a first dielectric layer formed on a second dielectric layer and planar contacts formed in the second dielectric layer. The planar contacts are spaced apart to form a gap therebetween. The first dielectric layer includes a thermally conductive dielectric layer and is formed on lateral sides of the planar contacts and in the gap. A resistive element is formed between the planar contacts over the gap and in contact with at least the thermally conductive dielectric layer in the gap.
Claims20
A method for forming a semiconductor device, comprising:
- forming at least one heat sink in a first dielectric layer, the at least one heat sink configured to dissipate heat;
- patterning a thermally conductive dielectric layer to form planar contacts within the thermally conductive dielectric layer and in contact or in near contact with the at least one heat sink;
- and
- forming a resistive element between the planar contacts over a gap and in contact with at least the thermally conductive dielectric layer in the gap.
A method for forming a semiconductor device, comprising:
- forming at least one heat sink on a substrate, the at least one heat sink configured to dissipate heat;
- forming a thermally conductive dielectric layer over the at least one heat sink;
- forming planar contacts in the thermally conductive dielectric layer and each planar contact in contact or in near contact with a corresponding one of the at least one heat sink;
- and
- forming a resistive element between the planar contacts over the gap and in contact with at least the thermally conductive dielectric layer in the gap.
Dependencies are inferred from the claim text.