Conductive structure and method of forming the same

A method, comprising:

• forming a trench in a substrate;
• depositing a barrier layer in the trench, the barrier layer forming a neck of barrier layer material at a top of the trench, the barrier layer lining angled sidewalls of the trench below the neck of barrier layer material;
• lining the barrier layer with a first seed layer, the first seed layer having an upper portion lining the neck of barrier layer material and a lower portion lining the angled sidewalls below the neck of barrier layer material;
• treating the upper portion of the first seed layer with a first treatment, the first treatment suppressing formation of conductive materials on the upper portion;
• forming a first fill in the trench on a lower portion of the first seed layer, the first fill comprising a first conductive material, the first fill partially filling the trench;
• and
• removing the upper portion of the first seed layer to expose the neck of barrier layer material, the lower portion of the first seed layer remaining on the angled sidewalls below the neck of barrier layer material.

A method, comprising:

• etching a trench in a substrate;
• lining the trench with a first seed layer;
• treating an upper portion of the first seed layer with a first treatment, wherein a lower portion of the first seed layer remains untreated;
• partially filling the trench with a first conductive material on the lower portion of the first seed layer, wherein the first treatment causes the upper portion of the first seed layer to be substantially free of the first conductive material;
• and
• removing the upper portion of the first seed layer by a halogen containing etchant, wherein the halogen containing etchant removes portions of the first seed layer that have been treated from sidewalls of the trench, and wherein the halogen containing etchant removes a portion of the first conductive material to form a depression in a top surface of the first conductive material.