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US 10,373,904 B2Granted
Semiconductor devices including capacitors, related electronic systems, and related methods
AssigneeMicron Technology, Inc.
InventorEric H. Freeman
Life of this patent
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Abstract
A semiconductor device includes a capacitor structure. The capacitor structure comprises conductive vias extending through openings in a stack of alternating dielectric materials and first conductive materials, each conductive via comprising a second conductive material extending through the openings and another dielectric material on sidewalls of the openings, first conductive lines in electrical communication with a first group of the conductive vias, and second conductive lines in electrical communication with a second group of the conductive vias. Related semiconductor device, electronic systems, and methods are disclosed.
Claims26
A semiconductor device, comprising:
- a capacitor structure, comprising:
- conductive vias extending through a stack of alternating dielectric materials and first conductive materials, each conductive via comprising a second conductive material extending through the stack of alternating dielectric materials and within another dielectric material on a sidewall of the conductive via;
- a first conductive line in electrical communication with a first group of the conductive vias;
- and
- a second conductive line in electrical communication with a second group of the conductive vias.
2 more elements
A semiconductor device, comprising:
- a first component of an integrated circuit;
- a second component of the integrated circuit;
- and
- a capacitor structure between the first component of the integrated circuit and the second component of the integrated circuit, the capacitor structure comprising:
- conductive vias extending through alternating first dielectric materials and first conductive materials, each conductive via of the conductive vias including a central portion comprising a second conductive material and a second dielectric material on sidewalls of the second conductive material, the second dielectric material extending along a length of the conductive via, the second conductive material separated from the first conductive materials by the second dielectric material;
- and
- capacitors each defined by a portion of the second conductive material, the second dielectric material, and one region of the first conductive material.
4 more elements
A method of forming a capacitor structure in a semiconductor device, the method comprising:
- forming a stack comprising alternating first dielectric materials and second dielectric materials;
- forming openings in the stack in a memory array region and in a via region of the semiconductor device;
- selectively removing portions of the second dielectric materials from the stack to form gaps between adjacent portions of the alternating first dielectric materials;
- forming a first conductive material in the gaps to form the stack to comprise alternating dielectric materials and first conductive materials;
- forming a dielectric material on a sidewall of the openings in the via region;
- forming a second conductive material in the openings of the via region over the dielectric material to form conductive vias comprising a portion of a capacitor structure comprising the second conductive material, the dielectric material on the sidewall of the conductive via, and the first conductive material;
- forming a first conductive line in electrical communication with a first group of the conductive vias;
- and
- forming a second conductive line in electrical communication with a second group of the conductive vias.
6 more elements
An electronic system, comprising:
- a processor;
- a semiconductor device operably coupled to the processor, the semiconductor device including a capacitor structure comprising:
- a first set of capacitors comprising a first group of conductive vias extending through a stack of conductive materials and dielectric materials;
- a second set of capacitors comprising a second group of conductive vias extending through the stack of conductive materials and dielectric materials,
- wherein each conductive via of the first group of conductive vias and the second group of conductive vias comprises a dielectric liner on a sidewall thereof and a conductive material filling the conductive via;
- a first electrically conductive lead in electrical communication with the first set of capacitors;
- and
- a second electrically conductive lead in electrical communication with the second set of capacitors;
- and
- a power supply in operable communication with the processor.
7 more elements
A semiconductor device, comprising:
- a first component of an integrated circuit;
- a second component of the integrated circuit;
- and
- a capacitor structure between the first component of the integrated circuit and the second component of the integrated circuit, the capacitor structure comprising:
- conductive vias extending through alternating first dielectric materials and first conductive materials, each conductive via including a second dielectric material on a sidewall thereof and a central portion comprising a second conductive material;
- and
- capacitors each defined by a portion of the second conductive material, the second dielectric material, and one region of the first conductive material,
- wherein the conductive vias are arranged in rows and columns, wherein every other column is in electrical communication with a first conductive line and the other of the every other columns is in electrical communication with a second conductive line.
5 more elements
A semiconductor device, comprising:
- a first component of an integrated circuit;
- a second component of the integrated circuit;
- a capacitor structure between the first component of the integrated circuit and the second component of the integrated circuit, the capacitor structure comprising:
- conductive vias extending through alternating first dielectric materials and first conductive materials, each conductive via including a second dielectric material on a sidewall thereof and a central portion comprising a second conductive material;
- and
- capacitors each defined by a portion of the second conductive material, the second dielectric material, and one region of the first conductive material;
- and
- a memory cell region including memory cell pillars extending through the alternating first dielectric materials and first conductive materials.
5 more elements
A semiconductor device, comprising:
- a first component of an integrated circuit;
- a second component of the integrated circuit;
- and
- a capacitor structure between the first component of the integrated circuit and the second component of the integrated circuit, the capacitor structure comprising:
- conductive vias extending through alternating first dielectric materials and first conductive materials, each conductive via including a second dielectric material on a sidewall thereof and a central portion comprising a second conductive material, the second dielectric material having a thickness between about 10 nm and about 30 nm;
- and
- capacitors each defined by a portion of the second conductive material, the second dielectric material, and one region of the first conductive material.
4 more elements
Dependencies are inferred from the claim text.