Method and system of measuring semiconductor device and method of fabricating semiconductor device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsChoonshik Leem, Jihye Lee, Deokyong Kim, Soobok Chin
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Abstract
The measurement method may include obtaining first measurement data from a recess region formed in a semiconductor substrate, obtaining second measurement data from a conductive pattern filling a portion of the recess region, calculating a first volume of the recess region from the first measurement data, calculating a second volume of the conductive pattern from the second measurement data, and calculating a measurement target parameter using a difference between the first and second volumes.
Claims18
A system for measuring a semiconductor device, comprising:
- a first measurement instrument configured to measure a width of a recess region formed in a semiconductor substrate;
- a second measurement instrument configured to measure a depth of the recess region;
- a third measurement instrument configured to measure a mass of an element contained in a conductive pattern filling a portion of the recess region;
- and
- a computer system,
- the computer system including a controller and a memory,
- the computer system, in response to executing commands stored in the memory using the controller, being configured to,
- calculate a first volume of the recess region using the width of the recess region and the depth of the recess region,
- calculate a second volume of the conductive pattern using the mass of the element contained in the conductive pattern,
- calculate a measurement target parameter using a difference between the first volume and the second volume, and
- provide an approximation of an actual target parameter in the semiconductor substrate using the measurement target parameter for non-destructive measuring.
A system for measuring a semiconductor device, comprising:
- a first measurement instrument configured to measure a width of a recess region formed in a semiconductor substrate;
- a second measurement instrument configured to measure a depth of the recess region;
- a third measurement instrument configured to measure a mass of an element contained in a conductive pattern filling a portion of the recess region;
- a computer system,
- the computer system including a controller and a memory,
- the computer system, in response to executing commands stored in the memory using the controller, being configured to,
- calculate a first volume of the recess region using the width of the recess region and the depth of the recess region,
- calculate a second volume of the conductive pattern using the mass of the element contained in the conductive pattern, and
- calculate a measurement target parameter using a difference between the first volume and the second volume, wherein
- the computer system further includes a calculation module for calculating the measurement target parameter,
- the computer system, in response to executing the calculation module using the controller, is configured to calculate the measurement target parameter, and
- the computer system, in response to executing the calculation module using the controller, is configured to calculate the first volume, the second volume, and the measurement target parameter,
- the first volume being calculated by multiplying the width of the recess region, the depth of the recess region, and a first constant,
- the second volume being calculated by multiplying the mass of the element contained in the conductive pattern by a second constant, and
- the measurement target parameter being calculated by dividing a third volume, which is obtained by subtracting the second volume from the first volume, by multiplication of the width of the recess region and the first constant,
- the computer system further includes a verification module to verify the calculation module, and
- the computer system, in response to executing the verification module using the controller, is configured to determine the first constant and the second constant to reduce an error between the measurement target parameter calculated by the calculation module and reference data, and
- the computer system is configured to provide an approximation of an actual target parameter in the semiconductor substrate using the measurement target parameter for non-destructive measuring.
Dependencies are inferred from the claim text.