Semiconductor device and related manufacturing method

A method for manufacturing a semiconductor device, the method comprising:

• preparing a substrate;
• providing an n-channel field-effect transistor positioned on the substrate, wherein the n-channel field-effect transistor comprises an n-type silicide source portion, an n-type silicide drain portion, and a first n-type channel region, and wherein the first n-type channel region is positioned between the n-type silicide source portion and the n-type silicide drain portion and directly contacts each of the n-type silicide source portion and the n-type silicide drain portion, wherein the entire first n-type channel region has a same conductivity type and a same width, and a doping concentration value at a gate-channel interface of the first n-type channel region is higher than a doping concentration value at an inner center portion of the first n-type channel region, and wherein the n-type silicide source portion, the n-type silicide drain portion, and the first n-type channel region have a same height;
• and
• providing a p-channel field-effect transistor positioned on the substrate.