Semiconductor device with contracted isolation feature and formation method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsDian-Sheg Yu, Ren-Fen Tsui, Jhon-Jhy Liaw
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Abstract
A method of forming a semiconductor device includes forming a first dummy gate structure over a substrate, forming gate spacers over the substrate, cutting the first dummy gate structure to form separated dummy gate portions, forming a dielectric feature between the dummy gate portions, and performing a thermal process to the dielectric feature to contract the dielectric feature, wherein the contraction of the dielectric feature deforms at least one of the gate spacers such that a distance between the gate spacers is increased.
Claims20
A method of forming a semiconductor device, comprising:
- forming a first dummy gate structure over a substrate;
- forming gate spacers over the substrate;
- cutting the first dummy gate structure to form separated dummy gate portions;
- forming a dielectric feature between the dummy gate portions;
- performing a thermal process to the dielectric feature to contract the dielectric feature, the contraction of the dielectric feature deforming at least one of the gate spacers such that a distance between the gate spacers is increased;
- and
- forming a second dummy gate structure prior to performing the thermal process, wherein the contraction of the dielectric feature enlarges the second dummy gate structure.
A method of forming a semiconductor device, comprising:
- forming a first dummy gate structure over a substrate;
- forming gate spacers over the substrate;
- forming an opening in the first dummy gate structure;
- forming an isolation feature into the opening in the first dummy gate structure;
- contracting the isolation feature, thereby deforming at least one of the gate spacers to increase a distance between the gate spacers;
- forming a second dummy gate structure prior to contracting the isolation feature, wherein contracting the isolation feature expands the second dummy gate structure;
- and
- replacing the expanded second dummy gate structure with a gate metal.
A method of forming a semiconductor device, wherein the method comprises:
- forming a plurality of fins respectively protruding from a substrate;
- forming a first dummy gate structure and a second dummy gate structure crossing the fins;
- forming a gate spacer adjoining a side of the second dummy gate structure;
- growing source/drain devices on both sides of each of the first dummy gate structure and the second dummy gate structure on the fins;
- performing a cut operation on the first dummy gate structure, thereby forming an opening;
- depositing a dielectric feature in the opening;
- performing a thermal operation to contract the dielectric feature, thereby deforming the gate spacer adjoining the second dummy gate structure;
- removing the second dummy gate structure, thereby forming a gate trench;
- and
- depositing a metal gate structure in the gate trench.
The method of 17, further comprising performing the thermal operation to expand the second dummy gate structure.
Dependencies are inferred from the claim text.