Semiconductor device and method of manufacturing the same

A method of manufacturing a chip, the method comprising:

• forming a plurality of bottom source/drain regions on a substrate;
• forming first, second, and third vertical structures on the substrate, each of the first, second, and third vertical structures including a vertical channel;
• forming bottom spacers on the substrate between the first and second vertical structures, and the second and third vertical structures, respectively;
• forming a gate metal on outer surfaces of the first, second and third vertical structures;
• removing a portion of the gate metal from the outer surfaces of the first, second, and third vertical structures, respectively;
• and
• forming first and second trenches protruding into the substrate between the first and second vertical structures, and the second and third vertical structures, respectively, wherein a first width of the first trench is smaller than a second width of the second trench, and
• wherein the forming the first and second trenches occurs after the portion of the gate metal has been removed from the outer surfaces of the first, second, and third vertical structures.

A method for fabricating a chip, the method comprising:

• forming a plurality of vertical structures on a substrate, each of the vertical structures including a top source/drain region and a channel;
• forming a plurality of bottom source/drain regions on the substrate between the plurality of vertical structures;
• forming a spacer on the plurality of bottom source/drain regions between the plurality of vertical structures;
• forming a gate metal on the spacer and on the plurality of vertical structures;
• removing a portion of the gate metal and a portion of the substrate between the plurality of vertical structures to form first and second trenches and corresponding spaces above the first and second trenches, wherein a first width of the first trench is smaller than a second width of the second trench;
• forming a first insulating material that fills the first trench and extends along the second trench;
• forming a second insulating material different from the first insulating material that fills the second trench on the first insulating material;
• and
• manufacturing a plurality of transistors with the first and second trenches formed between the plurality of transistors.