Methods of forming source/drain contact structures on integrated circuit products

A method, comprising:

• forming a plurality of transistor devices on a semiconductor substrate, each of said transistor devices comprising a sacrificial gate structure, a gate cap, source/drain regions, source/drain epitaxial semiconductor material in said source/drain regions, a contact etch stop layer positioned above said source/drain epitaxial semiconductor material and an insulating material positioned above said contact etch stop layer;
• sequentially forming a plurality of patterned etch masks above said transistor devices;
• after forming each of said patterned etch masks, performing an etching process sequence through said patterned etch masks, wherein said etching process sequence is adapted to sequentially remove said insulating material, said contact etch stop layer and said source/drain epitaxial semiconductor material so as to form a plurality of contact isolation cavities;
• forming a contact isolation structure in each of said plurality of contact isolation cavities;
• after forming said contact isolation structures, removing said sacrificial gate structures so as to form a plurality of replacement gate cavities;
• and
• forming a final gate structure in each of said plurality of replacement gate cavities.

A method, comprising:

• forming a plurality of transistor devices on a semiconductor substrate, each of said transistor devices comprising a sacrificial gate structure, a gate cap, source/drain regions, source/drain epitaxial semiconductor material in said source/drain regions, a contact etch stop layer positioned above said source/drain epitaxial semiconductor material and an insulating material positioned above said contact etch stop layer;
• forming a patterned etch mask above said transistor devices;
• after forming said patterned etch mask, performing an etching process sequence through said patterned etch mask, wherein said etching process sequence is adapted to sequentially remove said insulating material, said contact etch stop layer and said source/drain epitaxial semiconductor material so as to form a plurality of contact isolation cavities;
• forming a contact isolation structure in each of said plurality of contact isolation cavities;
• after forming said contact isolation structures, removing said sacrificial gate structures so as to form a plurality of replacement gate cavities;
• and
• forming a final gate structure in each of said plurality of replacement gate cavities.