Method of processing a porous conductive structure in connection to an electronic component on a substrate

A method for processing a semiconductor substrate, the method comprising:

• processing a plurality of device regions in a semiconductor substrate laterally separated from each other by dicing regions, each device region comprising at least one semiconductor component, wherein processing each device region of the plurality of device regions comprises:
• forming a recess into the semiconductor substrate in the device region directly over the at least one semiconductor component, wherein the recess comprises vertical recess sidewalls of the semiconductor substrate and extends into the semiconductor substrate towards the at least one semiconductor component, wherein the recess sidewalls are arranged in the device region;
• forming a metallization in the recess that is directly over the at least one semiconductor component for mechanical stabilization, wherein the metallization has a greater porosity than the recess sidewalls;
• and
• singulating the plurality of device regions from each other by dicing the semiconductor substrate in the dicing region.

A method for processing a substrate, the method comprising:

• processing a plurality of device regions in a substrate laterally separated from each other by dicing regions, each device region comprising at least one electronic component, wherein processing each device region of the plurality of device regions comprises:
• forming a recess into the substrate in the device region directly over the at least one electronic component, wherein the recess comprises vertical recess sidewalls of the substrate and extends into the substrate towards the at least one electronic component, wherein the recess sidewalls are arranged in the device region;
• forming a contact pad in the recess that is directly over the at least one electronic component to electrically connect the at least one electronic component, wherein the contact pad has a greater porosity than the recess sidewalls;
• and
• singulating the plurality of device regions from each other by dicing the substrate in the dicing region;
• wherein the recess sidewalls comprise a semiconductor material and a greater hardness than the contact pad.