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US 10,373,867 B2Granted
Cobalt contact and interconnect structures
AssigneeInternational Business Machines Corporation
InventorsHari P. Amanapu, Raghuveer R. Patlolla, Cornelius Brown Peethala, Chih-Chao Yang
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Abstract
Methods and structures for forming cobalt contact and/or cobalt interconnects includes depositing a stress control layer onto the cobalt layer prior to annealing after which the stress control layer can be removed. The stress control layer prevents formation of defects that can occur in the absence of the stress control layer.
Claims19
A method for forming an integrated circuit comprising:
- providing a patterned substrate comprising a trench structure, a via structure or combinations thereof in a dielectric layer;
- depositing a metal liner layer onto the patterned substrate;
- depositing cobalt onto the metal liner layer;
- depositing a stress control layer onto the cobalt;
- and
- annealing the patterned substrate to increase grain size of the cobalt.
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A method for forming a contact structure or an interconnect structure in a semiconductor structure, comprising:
- forming at least one opening extending through an interlayer dielectric;
- filling the at least one opening with cobalt and forming an overburden of cobalt;
- depositing a stress control layer on the overburden, wherein the stress control layer is configured to prevent diffusion of the cobalt into the stress control layer;
- annealing the semiconductor structure;
- and
- removing the stress control layer and the overburden subsequent to the annealing.
3 more elements
Dependencies are inferred from the claim text.