Pre-clean chamber and process with substrate tray for changing substrate temperature

A method for integrated circuit fabrication, comprising:

• removing oxide material from a surface of a substrate, wherein the surface comprises silicon, and wherein removing the oxide material comprises:
• providing the substrate on a substrate tray comprising a heating element;
• cooling the substrate by transferring heat from the substrate tray to a cooling body, wherein the substrate tray is movable relative to the cooling body and wherein cooling the substrate comprises reducing a distance between the cooling body and the substrate seated upon the substrate tray;
• depositing a halogen-containing material on the cooled substrate while the substrate is on the substrate tray;
• subsequently sublimating the halogen-containing material by heating the cooled substrate by increasing a distance between the cooling body and the substrate seated upon the substrate tray and by transferring heat from the substrate tray to the substrate, wherein cooling the substrate, depositing the halogen-containing material on the cooled substrate, and subsequently sublimating the halogen-containing material are each part of an oxide removal cycle, and
• subjecting the substrate to a plurality of sequential oxide removal cycles in a single reaction chamber without transferring the substrate to a different reaction chamber,
• wherein, during heating the cooled substrate, an upper solid surface of the cooling body defines a separation between the upper solid surface and a lower surface of the substrate tray, and
• wherein a ratio of a mass of the cooling body to a mass of the substrate tray is in a range of 10:1 to 60:1.