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US 10,373,827 B2Granted
Method of pattern transfer
AssigneeUnited Microelectronics Corp.
InventorsEn-Chiuan Liou, Yu-Cheng Tung
Life of this patent
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Abstract
A method of pattern transfer is provided, comprising: providing a target layer; forming a first pattern above the target layer; forming a second pattern (such as spacer loops) above the target layer and above the first pattern, wherein one closed end of the second pattern partially overlaps with the first pattern; and transferring the second pattern to the target layer, wherein the first pattern stops transferring pattern of the closed end of the second pattern to the target layer.
Claims19
A method of pattern transfer, comprising:
- providing a first pattern;
- forming a second pattern above the first pattern, wherein one closed end of the second pattern partially overlaps with the first pattern;
- and
- transferring the second pattern to a target layer under the second pattern, wherein the first pattern stops transferring a pattern of the closed end of the second pattern to the target layer, and the second pattern comprises spacer loops, and each of the spacer loops extends along a first direction, and the spacer loops are positioned adjacently and arranged along a second direction, wherein the first pattern extends along the second direction to stop transferring patterns of closed ends of the spacer loops to the target layer.
1 more element
A method for pattern transfer, comprising:
- providing a first pattern;
- forming a second pattern above the first pattern, and the second pattern comprising:
- first spacer loops corresponding to a first region of a target layer under the second pattern;
- and
- second spacer loops corresponding to a second region of the target layer, wherein adjacent closed ends of the first spacer loops and the second spacer loops are formed above and corresponding within a first feature of the first pattern;
- and
- transferring the second pattern to the target layer, wherein the first feature of the first pattern stops transferring patterns of the adjacent closed ends of the first spacer loops and the second spacer loops to the target layer.
4 more elements
Dependencies are inferred from the claim text.