Metal interconnect structure

A metal interconnect structure, comprising:

• a semiconductor substrate;
• at least one conductive via formed on a surface of the semiconductor substrate;
• a first dielectric layer with a surface leveling with top surface of the conductive via formed on the surface of the semiconductor substrate;
• a reticle substrate including at least a scattering bar and a metal line pattern region, having a plurality of metal line patterns;
• and
• a plurality of metal lines on the first dielectric layer and on a top surface of the conductive via to overlap with the conductive via on the semiconductor substrate, the plurality of metal lines completely covering and electrically contacting the conductive vias on the semiconductor substrate, wherein the plurality of metal lines are formed using the reticle substrate, in a photo-exposure process, wherein:
• the scattering bar is extending in an extending direction of the plurality of metal lines on the surface of the semiconductor substrate;
• the scattering bar on the reticle is located next to the conductive via on the semiconductor substrate for the photo-exposure process;
• and
• the plurality of metal lines corresponds to the plurality of metal line patterns on the reticle.