CVD silicon monolayer formation method and gate oxide ALD formation on semiconductor materials

A method for depositing silicon, the method comprising:

• forming a silicon seed layer on a substrate surface comprising a III-V material or SiGe, by a process comprising:
• forming a Si—Cl monolayer by reacting the substrate surface with only a first reactive precursor, comprising cycling dosing multiple cycles of the first reactive precursor at a temperature between 300° C. and 500° C., wherein the first reactive precursor consists of one or more active species selected from the group consisting of SiCl4, Si2Cl6, Si3Cl8, and mixtures thereof;
• and
• after forming the Si—Cl monolayer, desorbing chlorine from the Si—Cl monolayer by treating the Si—Cl monolayer with atomic hydrogen to form the silicon seed layer;
• and
• forming a silicon multilayer on the silicon seed layer by cycling dosing between 1 and 100 cycles of one or more second reactive precursors and atomic hydrogen at a temperature between 300° C. and 500° C.