Deployment of light energy within specific spectral bands in specific sequences for deposition, treatment and removal of materials

A method of processing a substrate, comprising:

• depositing a silicon matrix on a substrate;
• exposing the silicon matrix to a first wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber;
• exposing the silicon matrix to a second wavelength or wavelength range of ultraviolet radiation in the ultraviolet processing chamber, wherein the second wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range;
• exposing the silicon matrix to a third wavelength or wavelength range of ultraviolet radiation in the ultraviolet processing chamber, wherein the third wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range and second wavelength or wavelength range;
• treating the silicon matrix by a deposition operation, a reactive cure, a thermal cure, or a combination thereof;
• and
• repeating exposing the silicon matrix in the ultraviolet processing chamber to the first wavelength or wavelength range, the second wavelength or wavelength range, the third wavelength or wavelength range, or a combination thereof.

A method of processing a substrate, comprising:

• depositing a silicon matrix on a substrate;
• exposing the silicon matrix to a first ultraviolet radiation having a wavelength or wavelength range between about 190 nm and about 800 nm in the ultraviolet processing chamber;
• exposing the silicon matrix to a second ultraviolet radiation having a wavelength or wavelength range between about 180 nm and about 190 nm in the ultraviolet processing chamber;
• exposing the silicon matrix to a third ultraviolet radiation having a wavelength or wavelength range between about 165 nm and about 180 nm in an ultraviolet processing chamber;
• treating the silicon matrix by a deposition operation, a reactive cure, a thermal cure, or a combination thereof;
• repeating exposing the silicon matrix to the first, second, and third ultraviolet radiation in the ultraviolet processing chamber;
• and
• maintaining a temperature of the substrate between about −100° C. and about 500° C. during exposure to ultraviolet radiation.