Gas flow profile modulated control of overlay in plasma CVD films

A processing chamber for depositing a film on a substrate, comprising:

• a chamber body comprising a chamber lid, a chamber bottom, and one or more chamber walls which define a processing volume;
• a heater, movably disposed in the processing volume, the heater comprising:
• a stem;
• and
• a ceramic heater plate disposed on the stem, the ceramic heater plate comprising a first heating zone and a second heating zone circumscribing the first heating zone and further comprising one or more heating coils configured to heat the first heating zone to a first temperature and the second heating zone to a second temperature;
• and
• a gas distribution assembly disposed in the processing volume, comprising:
• a blocker plate disposed in the processing volume between the ceramic heater plate and the chamber lid, the blocker plate comprising a circular first inner region and an annular first outer region circumscribing the circular first inner region, wherein the circular first inner region and the annular first outer region each have a first plurality of openings formed therethrough, and wherein a density of openings in the circular first inner region is greater than a density of openings in the annular first outer region;
• and
• a showerhead disposed in the processing volume between the blocker plate and the ceramic heater plate, the showerhead comprising a circular second inner region and an annular second outer region circumscribing the circular second inner region, wherein the circular second inner region and the annular second outer region each have a second plurality of openings formed therethrough, wherein a density of openings in the circular second inner region is greater than a density of openings in the annular second outer region, and wherein a diameter of the circular first inner region of the blocker plate substantially corresponds to a diameter of the circular second inner region of the showerhead.

A processing chamber for depositing a film on a substrate, comprising:

• a chamber body comprising a chamber lid, a chamber bottom, and one or more chamber walls which define a processing volume;
• a heater, movably disposed in the processing volume, the heater comprising:
• a stem;
• and
• a ceramic heater plate disposed on the stem, the ceramic heater plate comprising a first heating zone and a second heating zone circumscribing the first heating zone and further comprising one or more heating coils configured to heat the first heating zone to a first temperature and the second heating zone to a second temperature, wherein the second heating zone is between about 90 mm and about 140 mm from a center axis of the heater;
• and
• a gas distribution assembly disposed in the processing volume, comprising:
• a blocker plate disposed in the processing volume between the ceramic heater plate and the chamber lid, the blocker plate comprising a circular first inner region and an annular first outer region circumscribing the circular first inner region, wherein the circular first inner region and the annular first outer region each include a first plurality of openings formed therethrough, and wherein a density of openings in the circular first inner region is greater than a density of openings in the annular first outer region;
• and
• a showerhead disposed in the processing volume between the blocker plate and the ceramic heater plate, the showerhead comprising a circular second inner region and an annular second outer region circumscribing the circular second inner region, wherein the circular second inner region and the annular second outer region each include a second plurality of openings formed therethrough, wherein a density of openings in the circular second inner region is greater than a density of openings in the annular second outer region, wherein a diameter of the circular first inner region of the blocker plate substantially corresponds to a diameter of the circular second inner region of the showerhead, and wherein an outer diameter of the annular second outer region of the showerhead substantially corresponds to a diameter of a substrate to be processed in the processing chamber.