Substrate processing method

A substrate processing method comprising:

• injecting a gas including a source material containing silicon towards substrates received in a reaction chamber;
• depositing the source material on the substrates by generating plasma including oxygen radicals so as to form deposition films;
• and
• executing surface treatment on the deposition films by injecting plasma gas including oxygen radicals,
• wherein the substrates include gaps receiving the deposition films therein, and
• wherein, the surface treatment is executed on the deposition films on inner surfaces of the gaps and on outer surfaces at a vicinity of the gaps, and
• wherein, in the execution of the surface treatment, the plasma gas is injected more to react with the deposition films on upper parts of the inner surfaces than with the deposition films on lower parts of the inner surfaces so that the deposition films formed on the lower parts of the inner surfaces are thicker than the deposition films formed on the upper parts of the inner surfaces.