Electronic device and method for reading data of resistive memory cell including drift recovery

An electronic device including a semiconductor memory, wherein the semiconductor memory comprises:

• a memory cell including a resistive memory element and a selection element, the resistive memory element configured to have a low resistance state and a high resistance state according to data stored in the memory cell, the selection element coupled serially to the resistive memory element,
• wherein in order to read the data stored in the memory cell, a recovery voltage is applied to first and second ends of the memory cell, and then a read voltage is applied to the first and second ends of the memory cell,
• wherein the recovery voltage is equal to or greater than a second voltage obtained by adding a drift amount of a first voltage of the memory cell to the first voltage, the first voltage corresponding to a threshold voltage for turning on the memory cell when the resistive memory element is in the low resistance state, the drift amount being generated by a drift phenomenon that occurred in the memory cell, and
• wherein the recovery voltage is smaller than a third voltage corresponding to a threshold voltage for turning on the memory cell when the resistive memory element is in the high resistance state, such that a drift of the memory cell when the resistive memory element is in the high resistance state is not compensated.